High hole and electron mobilities using Strained Si/Strained Ge heterostructures

High hole and electron mobilities using Strained Si/Strained Ge heterostructures

PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium...

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Bibliographic Details
Main Authors: Gupta, Saurabh, Lee, Minjoo L., Leitz, Christopher W., Fitzgerald, Eugene A.
Format: Article
Language:en_US
Published: 2003
Subjects:
strained-Ge
SiGe
germanium
MOSFET
mobility
strained-Si
pMOSFET
nMOSFET
germanium-diffusion
Online Access:http://hdl.handle.net/1721.1/3830

Internet

http://hdl.handle.net/1721.1/3830

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