High hole and electron mobilities using Strained Si/Strained Ge heterostructures
PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2003
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/3830 |
| _version_ | 1826216511443828736 |
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| author | Gupta, Saurabh Lee, Minjoo L. Leitz, Christopher W. Fitzgerald, Eugene A. |
| author_facet | Gupta, Saurabh Lee, Minjoo L. Leitz, Christopher W. Fitzgerald, Eugene A. |
| author_sort | Gupta, Saurabh |
| collection | MIT |
| description | PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements. |
| first_indexed | 2024-09-23T16:48:49Z |
| format | Article |
| id | mit-1721.1/3830 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:48:49Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | mit-1721.1/38302019-04-12T13:40:50Z High hole and electron mobilities using Strained Si/Strained Ge heterostructures Gupta, Saurabh Lee, Minjoo L. Leitz, Christopher W. Fitzgerald, Eugene A. strained-Ge SiGe germanium MOSFET mobility strained-Si pMOSFET nMOSFET germanium-diffusion PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements. Singapore-MIT Alliance (SMA) 2003-12-13T16:54:41Z 2003-12-13T16:54:41Z 2004-01 Article http://hdl.handle.net/1721.1/3830 en_US Advanced Materials for Micro- and Nano-Systems (AMMNS); 308344 bytes application/pdf application/pdf |
| spellingShingle | strained-Ge SiGe germanium MOSFET mobility strained-Si pMOSFET nMOSFET germanium-diffusion Gupta, Saurabh Lee, Minjoo L. Leitz, Christopher W. Fitzgerald, Eugene A. High hole and electron mobilities using Strained Si/Strained Ge heterostructures |
| title | High hole and electron mobilities using Strained Si/Strained Ge heterostructures |
| title_full | High hole and electron mobilities using Strained Si/Strained Ge heterostructures |
| title_fullStr | High hole and electron mobilities using Strained Si/Strained Ge heterostructures |
| title_full_unstemmed | High hole and electron mobilities using Strained Si/Strained Ge heterostructures |
| title_short | High hole and electron mobilities using Strained Si/Strained Ge heterostructures |
| title_sort | high hole and electron mobilities using strained si strained ge heterostructures |
| topic | strained-Ge SiGe germanium MOSFET mobility strained-Si pMOSFET nMOSFET germanium-diffusion |
| url | http://hdl.handle.net/1721.1/3830 |
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