Plastic Relaxation In Single InᵡGa₁â‚‹ᵡN/GaN Epilayers Grown On Sapphire

Plastic Relaxation In Single InᵡGa₁₋ᵡN/GaN Epilayers Grown On Sapphire

Plastic relaxation was observed in InᵡGa₁₋ᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer thickness. Plastic relaxation in this material system reveals that there...

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Bibliographic Details
Main Authors: Song, T.L., Chua, Soo-Jin, Fitzgerald, Eugene A., Chen, Peng, Tripathy, S.
Format: Article
Language:en_US
Published: 2003
Subjects:
plastic relaxation
InᵡGa₁₋ᵡN/GaN Epilayers
sapphire
strain-thickness dependence
semiconductor material systems
relaxation constants
Online Access:http://hdl.handle.net/1721.1/3839

Internet

http://hdl.handle.net/1721.1/3839

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