Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire
Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer thickness. Plastic relaxation in this material system reveals that there...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://hdl.handle.net/1721.1/3839 |
| _version_ | 1826211702264299520 |
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| author | Song, T.L. Chua, Soo-Jin Fitzgerald, Eugene A. Chen, Peng Tripathy, S. |
| author_facet | Song, T.L. Chua, Soo-Jin Fitzgerald, Eugene A. Chen, Peng Tripathy, S. |
| author_sort | Song, T.L. |
| collection | MIT |
| description | Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer thickness. Plastic relaxation in this material system reveals that there is no discontinuous relaxation at critical thickness and once a layer starts to relieve, it follows the same strain-thickness dependence, unconstrained by the original misfit until the material system work hardens. From x-ray diffraction calibration, the in-plane and normal relaxation constants KP0 and KN0 for the InᵡGa₁âᵡN/GaN grown on sapphire were found to be â0.98 ± 0.03 and +0.51 ± 0.03 nm, respectively. |
| first_indexed | 2024-09-23T15:10:10Z |
| format | Article |
| id | mit-1721.1/3839 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:10:10Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | mit-1721.1/38392019-04-10T10:36:29Z Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire Song, T.L. Chua, Soo-Jin Fitzgerald, Eugene A. Chen, Peng Tripathy, S. plastic relaxation InᵡGa₁âᵡN/GaN Epilayers sapphire strain-thickness dependence semiconductor material systems relaxation constants Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer thickness. Plastic relaxation in this material system reveals that there is no discontinuous relaxation at critical thickness and once a layer starts to relieve, it follows the same strain-thickness dependence, unconstrained by the original misfit until the material system work hardens. From x-ray diffraction calibration, the in-plane and normal relaxation constants KP0 and KN0 for the InᵡGa₁âᵡN/GaN grown on sapphire were found to be â0.98 ± 0.03 and +0.51 ± 0.03 nm, respectively. Singapore-MIT Alliance (SMA) 2003-12-13T17:42:23Z 2003-12-13T17:42:23Z 2004-01 Article http://hdl.handle.net/1721.1/3839 en_US Advanced Materials for Micro- and Nano-Systems (AMMNS); 226183 bytes application/pdf application/pdf |
| spellingShingle | plastic relaxation InᵡGa₁âᵡN/GaN Epilayers sapphire strain-thickness dependence semiconductor material systems relaxation constants Song, T.L. Chua, Soo-Jin Fitzgerald, Eugene A. Chen, Peng Tripathy, S. Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire |
| title | Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire |
| title_full | Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire |
| title_fullStr | Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire |
| title_full_unstemmed | Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire |
| title_short | Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire |
| title_sort | plastic relaxation in single in x1d61 ga₁a x1d61 n gan epilayers grown on sapphire |
| topic | plastic relaxation InᵡGa₁âᵡN/GaN Epilayers sapphire strain-thickness dependence semiconductor material systems relaxation constants |
| url | http://hdl.handle.net/1721.1/3839 |
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