Plastic Relaxation In Single InᵡGa₁â‚‹ᵡN/GaN Epilayers Grown On Sapphire

Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire

Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer thickness. Plastic relaxation in this material system reveals that there...

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Bibliographic Details
Main Authors:	Song, T.L., Chua, Soo-Jin, Fitzgerald, Eugene A., Chen, Peng, Tripathy, S.
Format:	Article
Language:	en_US
Published:	2003
Subjects:	plastic relaxation InᵡGa₁âᵡN/GaN Epilayers sapphire strain-thickness dependence semiconductor material systems relaxation constants
Online Access:	http://hdl.handle.net/1721.1/3839

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