Growth and characterization of gallium arsenide grown by conventional and current-controlled liquid phase epitaxy.

Thesis. 1978. Ph.D.--Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.

Bibliographic Details
Main Author:	Gale, Ronald Paul
Other Authors:	August F. Witt.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2007
Subjects:	Materials Science and Engineering Gallium arsenide crystals Metal crystals Growth
Online Access:	http://hdl.handle.net/1721.1/39492

Internet

http://hdl.handle.net/1721.1/39492