Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals
A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type Si substrate. The MIS device was rapid thermal annealed at 1000°C. Capac...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2003
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/3969 |