Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is illustrated. The V-pits were sampled using Atomic Force Microscopy and Scanning...
| Auteurs principaux: | , , |
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| Format: | Article |
| Langue: | en_US |
| Publié: |
2003
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| Sujets: | |
| Accès en ligne: | http://hdl.handle.net/1721.1/3975 |