SiGeC Near Infrared Photodetectors
A near infrared waveguide photodetector in Si-based ternary Si₁âxâyGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. Th...
Main Authors: | , , , , |
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Format: | Article |
Language: | en_US |
Published: |
2003
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Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/3985 |