SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing hydrogen implantation. Etch-back approach produces SGOI subst...
| Main Authors: | , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2003
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/3986 |