Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si₁₋xGex/Si virtual substrates

Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si₁₋xGex/Si virtual substrates

We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si₀.₃Ge₀.₇ virtual substrates. The poor interface between silicon dioxide (SiO₂) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial sili...

Full description

Bibliographic Details
Main Authors: Lee, Minjoo L., Leitz, Christopher W., Cheng, Zhiyuan, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Format: Article
Language:en_US
Published: 2003
Subjects:
strained-Ge
SiGe
germanium
MOSFET
mobility
strained-Si
pMOSFET
Online Access:http://hdl.handle.net/1721.1/3989

Internet

http://hdl.handle.net/1721.1/3989

Similar Items