Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.

Bibliographic Details
Main Author:	Ritenour, Andrew P. (Andrew Paul), 1974-
Other Authors:	Dimitri A. Antoniadis.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2008
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://dspace.mit.edu/handle/1721.1/40545 http://hdl.handle.net/1721.1/40545

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