Vertical profile engineering and reliability study of silicon-germanium heterojunction bipolar transistors

Lignende værker

• Silicon-germanium heterojunction bipolar transistors /
  af: 190336 Cressler, John D., et al.
  Udgivet: (2003)
• Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors
  af: Taeyeong Kim, et al.
  Udgivet: (2024-11-01)
• Transient dose rate effects in silicon–germanium heterojunction bipolar transistors
  af: Pei Li, et al.
  Udgivet: (2023-12-01)
• Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors
  af: Radhakrishnan, K., et al.
  Udgivet: (2008)
• The AlInP material system in heterojunction bipolar transistor technology
  af: Yüksel, Ayça
  Udgivet: (2007)