Vertical profile engineering and reliability study of silicon-germanium heterojunction bipolar transistors

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.

Detalles Bibliográficos
Autor principal:	Liao, Kenneth S. (Kenneth Sen-Chun)
Otros Autores:	L. Rafael Reif.
Formato:	Tesis
Lenguaje:	eng
Publicado:	Massachusetts Institute of Technology 2008
Materias:	Electrical Engineering and Computer Science
Acceso en línea:	http://hdl.handle.net/1721.1/41347

Internet

http://hdl.handle.net/1721.1/41347