6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002

6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002

The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical un...

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Bibliographic Details
Main Authors: Del Alamo, Jesus, Tuller, Harry L.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Learning Object
Language:en-US
Published: 2002
Subjects:
integrated microelectronic devices
physics
silicon
circuit
semiconductor
p-n junction
metal-oxide semiconductor structure
metal-semiconductor junction
MOS field-effect transistor
bipolar junction transistor
energy band diagram
short-channel MOSFET
device characterization
device design
6.720J
3.43J
6.720
3.43
Microelectronics
Online Access:http://hdl.handle.net/1721.1/46331

Internet

http://hdl.handle.net/1721.1/46331

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