6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002
The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical un...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Learning Object |
| Language: | en-US |
| Published: |
2002
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/46331 |
| _version_ | 1826210265608224768 |
|---|---|
| author | Del Alamo, Jesus Tuller, Harry L. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Del Alamo, Jesus Tuller, Harry L. |
| author_sort | Del Alamo, Jesus |
| collection | MIT |
| description | The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project. |
| first_indexed | 2024-09-23T14:47:03Z |
| format | Learning Object |
| id | mit-1721.1/46331 |
| institution | Massachusetts Institute of Technology |
| language | en-US |
| last_indexed | 2025-03-10T12:30:26Z |
| publishDate | 2002 |
| record_format | dspace |
| spelling | mit-1721.1/463312025-02-25T16:48:01Z 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 Integrated Microelectronic Devices Del Alamo, Jesus Tuller, Harry L. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering integrated microelectronic devices physics silicon circuit semiconductor p-n junction metal-oxide semiconductor structure metal-semiconductor junction MOS field-effect transistor bipolar junction transistor energy band diagram short-channel MOSFET device characterization device design 6.720J 3.43J 6.720 3.43 Microelectronics The physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Emphasis on physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling outlined. Includes device characterization projects and device design project. 2002-12 Learning Object 6.720J-Fall2002 local: 6.720J local: 3.43J local: IMSCP-MD5-d47580483441c18496fb0c64e87bdaab http://hdl.handle.net/1721.1/46331 en-US Usage Restrictions: This site (c) Massachusetts Institute of Technology 2003. Content within individual courses is (c) by the individual authors unless otherwise noted. The Massachusetts Institute of Technology is providing this Work (as defined below) under the terms of this Creative Commons public license ("CCPL" or "license"). The Work is protected by copyright and/or other applicable law. Any use of the work other than as authorized under this license is prohibited. By exercising any of the rights to the Work provided here, You (as defined below) accept and agree to be bound by the terms of this license. The Licensor, the Massachusetts Institute of Technology, grants You the rights contained here in consideration of Your acceptance of such terms and conditions. text/html Fall 2002 |
| spellingShingle | integrated microelectronic devices physics silicon circuit semiconductor p-n junction metal-oxide semiconductor structure metal-semiconductor junction MOS field-effect transistor bipolar junction transistor energy band diagram short-channel MOSFET device characterization device design 6.720J 3.43J 6.720 3.43 Microelectronics Del Alamo, Jesus Tuller, Harry L. 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 |
| title | 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 |
| title_full | 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 |
| title_fullStr | 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 |
| title_full_unstemmed | 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 |
| title_short | 6.720J / 3.43J Integrated Microelectronic Devices, Fall 2002 |
| title_sort | 6 720j 3 43j integrated microelectronic devices fall 2002 |
| topic | integrated microelectronic devices physics silicon circuit semiconductor p-n junction metal-oxide semiconductor structure metal-semiconductor junction MOS field-effect transistor bipolar junction transistor energy band diagram short-channel MOSFET device characterization device design 6.720J 3.43J 6.720 3.43 Microelectronics |
| url | http://hdl.handle.net/1721.1/46331 |
| work_keys_str_mv | AT delalamojesus 6720j343jintegratedmicroelectronicdevicesfall2002 AT tullerharryl 6720j343jintegratedmicroelectronicdevicesfall2002 AT delalamojesus integratedmicroelectronicdevices AT tullerharryl integratedmicroelectronicdevices |