Demonstration of chalcogenide glass racetrack microresonators

We have demonstrated what we believe to be the first chalcogenide glass racetrack microresonator using a complementary metal-oxide semiconductor-compatible lift-off technique with thermally evaporated As[subscript 2]S[subscript 3] films. The device simultaneously features a small footprint of 0.012...

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Bibliographic Details
Main Authors: Petit, Laeticia, Hu, Juejun, Richardson, Kathleen, Carlie, Nathan, Kimerling, Lionel C, Agarwal, Anuradha
Other Authors: Massachusetts Institute of Technology. Materials Processing Center
Format: Article
Language:en_US
Published: Optical Society of America 2009
Online Access:http://hdl.handle.net/1721.1/49475
https://orcid.org/0000-0002-7233-3918
https://orcid.org/0000-0002-3913-6189
Description
Summary:We have demonstrated what we believe to be the first chalcogenide glass racetrack microresonator using a complementary metal-oxide semiconductor-compatible lift-off technique with thermally evaporated As[subscript 2]S[subscript 3] films. The device simultaneously features a small footprint of 0.012 mm×0.012 mm, a cavity Q (quality factor) of 10,000, and an extinction ratio of 32 dB. These resonators exhibit a very high sensitivity to refractive index changes with a demonstrated detection capability of ΔnAs2S3=(4.5×10[superscript −6] ±10%) refractive index unit. The resonators were applied to derive a photorefractive response of As[subscript 2]S[subscript 3] to λ=550 nm light. The resonator devices are a versatile platform for both sensing and glass material property investigation.