Origin of transverse magnetization in epitaxial Cu/Ni/Cu nanowire arrays

Origin of transverse magnetization in epitaxial Cu/Ni/Cu nanowire arrays

The patterning-induced changes in the magnetic anisotropy and hysteresis of epitaxial (100)-oriented Cu/Ni(9, 10, 15 nm)/Cu planar nanowires have been quantified. When the Ni films are patterned into lines, strain relaxation leads to a thickness-dependent net in-plane anisotropy transverse to the li...

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Bibliographic Details
Main Authors: Ciria, M., Castano, Fernando, Diez-Ferrer, J. L., Arnaudas, J. I., Ng, B. G., O'Handley, Robert C., Ross, Caroline A.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2010
Online Access:http://hdl.handle.net/1721.1/51808
https://orcid.org/0000-0003-2262-1249

Internet

http://hdl.handle.net/1721.1/51808
https://orcid.org/0000-0003-2262-1249

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