Transistor and Diode Studies
Contains reports on four research projects.
| Main Authors: | , , , , |
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| Format: | Technical Report |
| Language: | English |
| Published: |
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/52058 |
| _version_ | 1826200149993455616 |
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| author | Lipsky, A. H. Hurtig, C. R. Martindale, R. B. Jackson, W. D. Nelson, R. E. |
| author_facet | Lipsky, A. H. Hurtig, C. R. Martindale, R. B. Jackson, W. D. Nelson, R. E. |
| author_sort | Lipsky, A. H. |
| collection | MIT |
| description | Contains reports on four research projects. |
| first_indexed | 2024-09-23T11:31:56Z |
| format | Technical Report |
| id | mit-1721.1/52058 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:31:56Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/520582019-04-10T12:17:27Z Transistor and Diode Studies Lipsky, A. H. Hurtig, C. R. Martindale, R. B. Jackson, W. D. Nelson, R. E. Transistor and Diode Studies Temperature Coefficient of Silicon Junction Transition Capacity Temperature Dependence of Forward-Biased Junction Diodes Crystal Admittance Measurements Point-Contact Diode Static Characteristics Contains reports on four research projects. Lincoln Laboratory (Purchase Order DDL-B187) United States Department of the Army United States Department of the Navy United States Department of the Air Force (Contract AF19(122)-458) 2010-03-03T18:34:38Z 2010-03-03T18:34:38Z 1957-04-15 Technical Report RLE_QPR_045_XI http://hdl.handle.net/1721.1/52058 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Quarterly Progress Report, April 15, 1957 Transistor and Diode Studies Massachusetts Institute of Technology. Research Laboratory of Electronics. Quarterly Progress Report, no. 45 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | Transistor and Diode Studies Temperature Coefficient of Silicon Junction Transition Capacity Temperature Dependence of Forward-Biased Junction Diodes Crystal Admittance Measurements Point-Contact Diode Static Characteristics Lipsky, A. H. Hurtig, C. R. Martindale, R. B. Jackson, W. D. Nelson, R. E. Transistor and Diode Studies |
| title | Transistor and Diode Studies |
| title_full | Transistor and Diode Studies |
| title_fullStr | Transistor and Diode Studies |
| title_full_unstemmed | Transistor and Diode Studies |
| title_short | Transistor and Diode Studies |
| title_sort | transistor and diode studies |
| topic | Transistor and Diode Studies Temperature Coefficient of Silicon Junction Transition Capacity Temperature Dependence of Forward-Biased Junction Diodes Crystal Admittance Measurements Point-Contact Diode Static Characteristics |
| url | http://hdl.handle.net/1721.1/52058 |
| work_keys_str_mv | AT lipskyah transistoranddiodestudies AT hurtigcr transistoranddiodestudies AT martindalerb transistoranddiodestudies AT jacksonwd transistoranddiodestudies AT nelsonre transistoranddiodestudies |