A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

A simple semiempirical model I[subscript D](V[subscript GS], V[subscript DS]) for short-channel MOSFETs applicable in all regions of device operation is presented. The model is based on the so-called ldquotop-of-the-barrier-transportrdquo model, and we refer to it as the ldquovirtual sourcerdquo (VS...

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Bibliographic Details
Main Authors: Khakifirooz, A., Nayfeh, Osama M., Antoniadis, Dimitri A.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
virtual source velocity
inversion charge density
MOSFET compact modeling
CMOS scaling
Online Access:http://hdl.handle.net/1721.1/52366
https://orcid.org/0000-0002-4836-6525

Internet

http://hdl.handle.net/1721.1/52366
https://orcid.org/0000-0002-4836-6525

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