A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters
A simple semiempirical model I[subscript D](V[subscript GS], V[subscript DS]) for short-channel MOSFETs applicable in all regions of device operation is presented. The model is based on the so-called ldquotop-of-the-barrier-transportrdquo model, and we refer to it as the ldquovirtual sourcerdquo (VS...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/52366 https://orcid.org/0000-0002-4836-6525 |
| _version_ | 1826202877381574656 |
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| author | Khakifirooz, A. Nayfeh, Osama M. Antoniadis, Dimitri A. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Khakifirooz, A. Nayfeh, Osama M. Antoniadis, Dimitri A. |
| author_sort | Khakifirooz, A. |
| collection | MIT |
| description | A simple semiempirical model I[subscript D](V[subscript GS], V[subscript DS]) for short-channel MOSFETs applicable in all regions of device operation is presented. The model is based on the so-called ldquotop-of-the-barrier-transportrdquo model, and we refer to it as the ldquovirtual sourcerdquo (VS) model. The simplicity of the model comes from the fact that only ten parameters are used. Of these parameters, six are directly obtainable from standard device measurements: 1) gate capacitance in strong inversion conditions (typically at maximum voltage V[subscript GS] = V[subscript dd]); 2) subthreshold swing; 3) drain-induced barrier lowering (DIBL) coefficient; 4) current in weak inversion (typically I[subscript off] at V[subscript GS] = 0 V) and at high V[subscript DS]; 5) total resistance at V[subscript DS] = 0 V and V[subscript GS] = V[subscript dd] and 6), effective channel length. Three fitted physical parameters are as follows: 1) carrier low-field effective mobility; 2) parasitic source/drain resistance, 3) the saturation region carrier velocity at the so-called virtual source. Lastly, a constrained saturation-transition-region empirical parameter is also fitted. The modeled current versus voltage characteristics and their derivatives are continuous from weak to strong inversion and from the linear to saturation regimes of operation. Remarkable agreement with published state-of-the-art planar short-channel strained devices is demonstrated using physically meaningful values of the fitted physical parameters. Moreover, the model allows for good physical insight in device performance properties, such as extraction of the VSV, which is a parameter of critical technological importance that allows for continued MOSFET performance scaling. The simplicity of the model and the fact that it only uses physically meaningful parameters provides an easy way for technology benchmarking and performance projection. |
| first_indexed | 2024-09-23T12:23:43Z |
| format | Article |
| id | mit-1721.1/52366 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:23:43Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/523662022-09-28T07:56:09Z A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters Khakifirooz, A. Nayfeh, Osama M. Antoniadis, Dimitri A. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Antoniadis, Dimitri A. Khakifirooz, A. Nayfeh, Osama M. Antoniadis, Dimitri A. virtual source velocity inversion charge density MOSFET compact modeling CMOS scaling A simple semiempirical model I[subscript D](V[subscript GS], V[subscript DS]) for short-channel MOSFETs applicable in all regions of device operation is presented. The model is based on the so-called ldquotop-of-the-barrier-transportrdquo model, and we refer to it as the ldquovirtual sourcerdquo (VS) model. The simplicity of the model comes from the fact that only ten parameters are used. Of these parameters, six are directly obtainable from standard device measurements: 1) gate capacitance in strong inversion conditions (typically at maximum voltage V[subscript GS] = V[subscript dd]); 2) subthreshold swing; 3) drain-induced barrier lowering (DIBL) coefficient; 4) current in weak inversion (typically I[subscript off] at V[subscript GS] = 0 V) and at high V[subscript DS]; 5) total resistance at V[subscript DS] = 0 V and V[subscript GS] = V[subscript dd] and 6), effective channel length. Three fitted physical parameters are as follows: 1) carrier low-field effective mobility; 2) parasitic source/drain resistance, 3) the saturation region carrier velocity at the so-called virtual source. Lastly, a constrained saturation-transition-region empirical parameter is also fitted. The modeled current versus voltage characteristics and their derivatives are continuous from weak to strong inversion and from the linear to saturation regimes of operation. Remarkable agreement with published state-of-the-art planar short-channel strained devices is demonstrated using physically meaningful values of the fitted physical parameters. Moreover, the model allows for good physical insight in device performance properties, such as extraction of the VSV, which is a parameter of critical technological importance that allows for continued MOSFET performance scaling. The simplicity of the model and the fact that it only uses physically meaningful parameters provides an easy way for technology benchmarking and performance projection. Semiconductor Research Corporation Focus Center Research Program. Center for Materials, Structures and Devices 2010-03-08T15:21:14Z 2010-03-08T15:21:14Z 2009-07 2009-04 Article http://purl.org/eprint/type/JournalArticle 0018-9383 http://hdl.handle.net/1721.1/52366 CDF Collaboration et al. “Search for High-Mass Resonances Decaying to Dimuons at CDF.” Physical Review Letters 102.9 (2009): 091805. © 2009 IEEE https://orcid.org/0000-0002-4836-6525 en_US http://dx.doi.org/10.1109/ted.2009.2024022 IEEE Transactions on Electron Devices Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | virtual source velocity inversion charge density MOSFET compact modeling CMOS scaling Khakifirooz, A. Nayfeh, Osama M. Antoniadis, Dimitri A. A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters |
| title | A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters |
| title_full | A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters |
| title_fullStr | A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters |
| title_full_unstemmed | A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters |
| title_short | A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters |
| title_sort | simple semiempirical short channel mosfet current voltage model continuous across all regions of operation and employing only physical parameters |
| topic | virtual source velocity inversion charge density MOSFET compact modeling CMOS scaling |
| url | http://hdl.handle.net/1721.1/52366 https://orcid.org/0000-0002-4836-6525 |
| work_keys_str_mv | AT khakifirooza asimplesemiempiricalshortchannelmosfetcurrentvoltagemodelcontinuousacrossallregionsofoperationandemployingonlyphysicalparameters AT nayfehosamam asimplesemiempiricalshortchannelmosfetcurrentvoltagemodelcontinuousacrossallregionsofoperationandemployingonlyphysicalparameters AT antoniadisdimitria asimplesemiempiricalshortchannelmosfetcurrentvoltagemodelcontinuousacrossallregionsofoperationandemployingonlyphysicalparameters AT khakifirooza simplesemiempiricalshortchannelmosfetcurrentvoltagemodelcontinuousacrossallregionsofoperationandemployingonlyphysicalparameters AT nayfehosamam simplesemiempiricalshortchannelmosfetcurrentvoltagemodelcontinuousacrossallregionsofoperationandemployingonlyphysicalparameters AT antoniadisdimitria simplesemiempiricalshortchannelmosfetcurrentvoltagemodelcontinuousacrossallregionsofoperationandemployingonlyphysicalparameters |