Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability...

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Bibliographic Details
Main Authors: Piner, Edwin L., Jae-kyu, Lee, Chung, Jinwook, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
virtual substrate
metal–oxide–semiconductor field-effect transistor (MOSFET)
high electron mobility transistor (HEMT)
heterogeneous integration
Si(100)
GaN
Online Access:http://hdl.handle.net/1721.1/52375
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/52375
https://orcid.org/0000-0002-2190-563X

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