Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs
The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/52375 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1811091950089011200 |
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| author | Piner, Edwin L. Jae-kyu, Lee Chung, Jinwook Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Piner, Edwin L. Jae-kyu, Lee Chung, Jinwook Palacios, Tomas |
| author_sort | Piner, Edwin L. |
| collection | MIT |
| description | The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability of nitride semiconductors allowed the fabrication of Si MOSFETs on this substrate without degrading the performance of the GaN epilayers. After the Si devices were fabricated, the nitride epilayer is exposed, and the nitride transistors are processed. By using this technology, GaN and Si devices separated by less than 5 mum from each other have been fabricated, which is suitable for building future heterogeneous integrated circuits. |
| first_indexed | 2024-09-23T15:10:31Z |
| format | Article |
| id | mit-1721.1/52375 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:10:31Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/523752022-09-29T13:10:21Z Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs Piner, Edwin L. Jae-kyu, Lee Chung, Jinwook Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Palacios, Tomas Piner, Edwin L. Jae-kyu, Lee Chung, Jinwook Palacios, Tomas virtual substrate metal–oxide–semiconductor field-effect transistor (MOSFET) high electron mobility transistor (HEMT) heterogeneous integration Si(100) GaN The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability of nitride semiconductors allowed the fabrication of Si MOSFETs on this substrate without degrading the performance of the GaN epilayers. After the Si devices were fabricated, the nitride epilayer is exposed, and the nitride transistors are processed. By using this technology, GaN and Si devices separated by less than 5 mum from each other have been fabricated, which is suitable for building future heterogeneous integrated circuits. Interconnect Focus Center Defence Advanced Research Projects Agency Young Faculty Award IEEE Electron Devices Society 2010-03-08T16:42:45Z 2010-03-08T16:42:45Z 2009-08 2009-06 Article http://purl.org/eprint/type/JournalArticle 0741-3106 http://hdl.handle.net/1721.1/52375 Chung, J.W. et al. “Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs.” Electron Device Letters, IEEE 30.10 (2009): 1015-1017. © 2009 IEEE https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/led.2009.2027914 IEEE Electron Device Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | virtual substrate metal–oxide–semiconductor field-effect transistor (MOSFET) high electron mobility transistor (HEMT) heterogeneous integration Si(100) GaN Piner, Edwin L. Jae-kyu, Lee Chung, Jinwook Palacios, Tomas Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs |
| title | Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs |
| title_full | Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs |
| title_fullStr | Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs |
| title_full_unstemmed | Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs |
| title_short | Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs |
| title_sort | seamless on wafer integration of si 100 mosfets and gan hemts |
| topic | virtual substrate metal–oxide–semiconductor field-effect transistor (MOSFET) high electron mobility transistor (HEMT) heterogeneous integration Si(100) GaN |
| url | http://hdl.handle.net/1721.1/52375 https://orcid.org/0000-0002-2190-563X |
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