Lack of spatial correlation in mosfet threshold voltage variation and implications for voltage scaling

Lack of spatial correlation in mosfet threshold voltage variation and implications for voltage scaling

Due to increased variation in modern process technology nodes, the spatial correlation of variation is a key issue for both modeling and design. We have created a large array test-structure to analyze the magnitude of spatial correlation of threshold voltage (VT) in a 180 nm CMOS process. The data f...

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Bibliographic Details
Main Authors: Boning, Duane S., Drego, Nigel A., Chandrakasan, Anantha P.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
variation
threshold voltage
Spatial correlation
Online Access:http://hdl.handle.net/1721.1/52377
https://orcid.org/0000-0002-5977-2748
https://orcid.org/0000-0002-0417-445X

Internet

http://hdl.handle.net/1721.1/52377
https://orcid.org/0000-0002-5977-2748
https://orcid.org/0000-0002-0417-445X

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