Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs

Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs

Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si[subscript 0.4]5Ge[subscript 0.55]channel...

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Bibliographic Details
Main Authors: Gomez, Leonardo, Hashemi, Pouya, Hoyt, Judy L.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
uniaxial stress
silicon germanium
p-MOSFET
hole velocity
hole mobility
Online Access:http://hdl.handle.net/1721.1/52379

Internet

http://hdl.handle.net/1721.1/52379

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