Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs
Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si[subscript 0.4]5Ge[subscript 0.55]channel...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/52379 |
| Summary: | Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si[subscript 0.4]5Ge[subscript 0.55]channel devices relative to Si. The effective hole mobility is extracted utilizing the dR/dL method. A hole mobility enhancement is observed relative to Si hole universal mobility for short-channel devices with gate lengths ranging from 65 to 150 nm. Hole velocities extracted using several different methods are compared. The hole velocity of strained-SiGe p-MOSFETs is enhanced over comparable Si control devices. The hole velocity enhancements extracted are on the order of 30%. Ballistic velocity simulations suggest that the addition of (110) uniaxial compressive strain to Si[subscript 0.4]5Ge[subscript 0.55] can result in a more substantial increase in velocity relative to relaxed Si. |
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