Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs
Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si[subscript 0.4]5Ge[subscript 0.55]channel...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/52379 |
| _version_ | 1811071009321648128 |
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| author | Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. |
| author_sort | Gomez, Leonardo |
| collection | MIT |
| description | Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si[subscript 0.4]5Ge[subscript 0.55]channel devices relative to Si. The effective hole mobility is extracted utilizing the dR/dL method. A hole mobility enhancement is observed relative to Si hole universal mobility for short-channel devices with gate lengths ranging from 65 to 150 nm. Hole velocities extracted using several different methods are compared. The hole velocity of strained-SiGe p-MOSFETs is enhanced over comparable Si control devices. The hole velocity enhancements extracted are on the order of 30%. Ballistic velocity simulations suggest that the addition of (110) uniaxial compressive strain to Si[subscript 0.4]5Ge[subscript 0.55] can result in a more substantial increase in velocity relative to relaxed Si. |
| first_indexed | 2024-09-23T08:44:41Z |
| format | Article |
| id | mit-1721.1/52379 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T08:44:41Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
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| spelling | mit-1721.1/523792022-09-23T14:15:12Z Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Hoyt, Judy L. Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. uniaxial stress silicon germanium p-MOSFET hole velocity hole mobility Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si[subscript 0.4]5Ge[subscript 0.55]channel devices relative to Si. The effective hole mobility is extracted utilizing the dR/dL method. A hole mobility enhancement is observed relative to Si hole universal mobility for short-channel devices with gate lengths ranging from 65 to 150 nm. Hole velocities extracted using several different methods are compared. The hole velocity of strained-SiGe p-MOSFETs is enhanced over comparable Si control devices. The hole velocity enhancements extracted are on the order of 30%. Ballistic velocity simulations suggest that the addition of (110) uniaxial compressive strain to Si[subscript 0.4]5Ge[subscript 0.55] can result in a more substantial increase in velocity relative to relaxed Si. 2010-03-08T17:47:36Z 2010-03-08T17:47:36Z 2009-10 2009-05 Article http://purl.org/eprint/type/JournalArticle 0018-9383 INSPEC Accession Number: 10929303 http://hdl.handle.net/1721.1/52379 Gomez, L., P. Hashemi, and J.L. Hoyt. “Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs.” Electron Devices, IEEE Transactions on 56.11 (2009): 2644-2651. © 2009 Institute of Electrical and Electronics Engineers en_US http://dx.doi.org/10.1109/ted.2009.2031043 IEEE Transactions on Electron Devices Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | uniaxial stress silicon germanium p-MOSFET hole velocity hole mobility Gomez, Leonardo Hashemi, Pouya Hoyt, Judy L. Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs |
| title | Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs |
| title_full | Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs |
| title_fullStr | Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs |
| title_full_unstemmed | Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs |
| title_short | Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs |
| title_sort | enhanced hole transport in short channel strained sige p mosfets |
| topic | uniaxial stress silicon germanium p-MOSFET hole velocity hole mobility |
| url | http://hdl.handle.net/1721.1/52379 |
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