InGaAs Quantum Dots Coupled to a Reservoir of Nonequilibrium Free Carriers
We discuss the impact of a 2D-charged carrier reservoir for high-speed optical amplification and modulated lasing in quantum dot (QD)-based devices by testing the amplification of short trains of high power, femtosecond optical pulses in an InGaAs QD-in-a-well-based semiconductor optical amplifier (...
| Príomhchruthaitheoirí: | , , , , , |
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| Rannpháirtithe: | |
| Formáid: | Alt |
| Teanga: | en_US |
| Foilsithe / Cruthaithe: |
Institute of Electrical and Electronics Engineers
2010
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| Ábhair: | |
| Rochtain ar líne: | http://hdl.handle.net/1721.1/52416 |