Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap E[subscript g]2. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees...

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Bibliographic Details
Main Authors: Schimek, Oliver, Reich, Stephanie, Brewster, Megan Marie, Gradecak, Silvija
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2010
Online Access:http://hdl.handle.net/1721.1/52518

Internet

http://hdl.handle.net/1721.1/52518

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