Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI) technology using experiments and simulations. Logic circuits, i.e. CMOS inverter chains, were irradiated with cobalt-60 gamma radiation. When charge is induced in the n-channel FET with laser-probing...

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Bibliographic Details
Main Authors: Keast, Craig L., Wyatt, Peter W., Gouker, Pascale M., Gadlage, Matthew J., Narasimham, Balaji, Bhuva, Bharat L., Hughes, Harold, McMarr, Patrick, McMorrow, Dale
Other Authors: Lincoln Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/52599

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http://hdl.handle.net/1721.1/52599

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