Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax] and R [subscript ON]) with a synchronized pulse...

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Bibliographic Details
Main Authors: Joh, Jungwoo, del Alamo, Jesus A., Jimenez, Jose L., Tserng, Hua-Quen, Chou, Tso-Min, Chowdhury, Uttiya
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/52618

Internet

http://hdl.handle.net/1721.1/52618

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