Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes

Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes

The effect of 170 keV Si and 100 keV C ion bombardment on the structure and properties of highly pure, double-wall carbon nanotubes has been investigated using resonance Raman spectroscopy. The implantations were performed at room temperature with ion doses ranging between 1×1013  ions/cm2 and 1×101...

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Bibliographic Details
Main Authors: Dresselhaus, Mildred, Saraiva, G. D., Souza Filho, Antonio, Braunstein, G., Barros, Eduardo B., Filho, J. Mendes, Moreira, E. C., Fagan, S. B., Baptista, D. L., Kim, Y. A., Muramatsu, Hiroyuki, Endo, M.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2010
Online Access:http://hdl.handle.net/1721.1/52621
https://orcid.org/0000-0001-8492-2261

Internet

http://hdl.handle.net/1721.1/52621
https://orcid.org/0000-0001-8492-2261

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