N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN e...

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Bibliographic Details
Main Authors: Chung, Jinwook, Piner, Edwin L., Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
GaN
N-face GaN
high electron mobility transistor (HEMT)
hydrogen silsesquioxane (HSQ) adhesive bonding
layer transfer
silicon substrate
Online Access:http://hdl.handle.net/1721.1/52727
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/52727
https://orcid.org/0000-0002-2190-563X

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