N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN e...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/52727 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1811085639891812352 |
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| author | Chung, Jinwook Piner, Edwin L. Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Chung, Jinwook Piner, Edwin L. Palacios, Tomas |
| author_sort | Chung, Jinwook |
| collection | MIT |
| description | We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN epilayer grown on Si (111) is exposed by removing the Si substrate. To provide mechanical support, prior to the substrate removal, the Ga-face of the wafer is bonded to a Si (100) carrier wafer. The resultant N-face GaN/AlGaN heterostructures exhibited record transport properties (mu[subscript e] = 1670 cm[superscript 2]/Vmiddots, n[subscript s] = 1.6 times 10[superscript 13]/ cm[superscript 2], and R[subscript sh] = 240 Omega/sq). These excellent transport properties rendered N-face HEMTs with 30% higher maximum drain current than Ga-face HEMTs and good RF characteristics (f[subscript T] = 10.7 GHz middotmum and f[subscript max] = 21.5 GHzmiddotmum), comparable to state-of-the-art Ga-face devices. |
| first_indexed | 2024-09-23T13:12:53Z |
| format | Article |
| id | mit-1721.1/52727 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:12:53Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/527272022-09-28T12:41:22Z N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology Chung, Jinwook Piner, Edwin L. Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Palacios, Tomas Chung, Jinwook Palacios, Tomas GaN N-face GaN high electron mobility transistor (HEMT) hydrogen silsesquioxane (HSQ) adhesive bonding layer transfer silicon substrate We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN epilayer grown on Si (111) is exposed by removing the Si substrate. To provide mechanical support, prior to the substrate removal, the Ga-face of the wafer is bonded to a Si (100) carrier wafer. The resultant N-face GaN/AlGaN heterostructures exhibited record transport properties (mu[subscript e] = 1670 cm[superscript 2]/Vmiddots, n[subscript s] = 1.6 times 10[superscript 13]/ cm[superscript 2], and R[subscript sh] = 240 Omega/sq). These excellent transport properties rendered N-face HEMTs with 30% higher maximum drain current than Ga-face HEMTs and good RF characteristics (f[subscript T] = 10.7 GHz middotmum and f[subscript max] = 21.5 GHzmiddotmum), comparable to state-of-the-art Ga-face devices. United States. Office of Naval Research (MINE MURI Program) 2010-03-18T19:45:10Z 2010-03-18T19:45:10Z 2009-01 2008-11 Article http://purl.org/eprint/type/JournalArticle 0741-3106 INSPEC Accession Number: 10467329 http://hdl.handle.net/1721.1/52727 Chung, J.W., E.L. Piner, and T. Palacios. “N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology.” Electron Device Letters, IEEE 30.2 (2009): 113-116. © 2009 Institute of Electrical and Electronics Engineers https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/LED.2008.2010415 IEEE Electron Device Letters Article is made available in accordance with the publisher’s policy and may be subject to US copyright law. Please refer to the publisher’s site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | GaN N-face GaN high electron mobility transistor (HEMT) hydrogen silsesquioxane (HSQ) adhesive bonding layer transfer silicon substrate Chung, Jinwook Piner, Edwin L. Palacios, Tomas N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology |
| title | N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology |
| title_full | N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology |
| title_fullStr | N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology |
| title_full_unstemmed | N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology |
| title_short | N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology |
| title_sort | n face gan algan hemts fabricated through layer transfer technology |
| topic | GaN N-face GaN high electron mobility transistor (HEMT) hydrogen silsesquioxane (HSQ) adhesive bonding layer transfer silicon substrate |
| url | http://hdl.handle.net/1721.1/52727 https://orcid.org/0000-0002-2190-563X |
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