Modeling of GaN/AlN heterostructure-based nano pressure sensors
We quantify the influence of thermopiezoelectric effects in nano-sized Al[subscript x]Ga[subscript 1-x]N/GaN heterostructures for pressure sensor applications based on the barrier height modulation principle. We use a fully coupled thermoelectromechanical formulation, consisting of balance equation...
| Autors principals: | , , |
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| Altres autors: | |
| Format: | Article |
| Idioma: | en_US |
| Publicat: |
The International Society for Optical Engineering
2010
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| Accés en línia: | http://hdl.handle.net/1721.1/52740 |