Reliability of GaN high electron mobility transistors on silicon substrates

Samankaltaisia teoksia

• Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate
  Tekijä: Demirtas, Sefa, et al.
  Julkaistu: (2010)
• Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics
  Tekijä: Chung, Jinwook W. (Jinwook Will)
  Julkaistu: (2011)
• Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
  Tekijä: Lee, Ethan S
  Julkaistu: (2019)
• Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
  Tekijä: Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
  Julkaistu: (2017)
• Degradation mechanisms of GaN high electron mobility transistors
  Tekijä: Joh, Jungwoo
  Julkaistu: (2007)