Reliability of GaN high electron mobility transistors on silicon substrates

Reliability of GaN high electron mobility transistors on silicon substrates

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.

Bibliographic Details
Main Author:	Demirtas, Sefa
Other Authors:	Jesús A. del Alamo.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2010
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/53313

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