A Reconfigurable 8T Ultra-Dynamic Voltage Scalable (U-DVS) SRAM in 65 nm CMOS
In modern ICs, the trend of integrating more on-chip memories on a die has led SRAMs to account for a large fraction of total area and energy of a chip. Therefore, designing memories with dynamic voltage scaling (DVS) capability is important since significant active as well as leakage power savings...
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| 格式: | 文件 |
| 语言: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| 主题: | |
| 在线阅读: | http://hdl.handle.net/1721.1/53553 https://orcid.org/0000-0002-5977-2748 |