Evaluation of the colossal electroresistance (CER) effect and its application in the non-volatile Resistive Random Access Memory (RRAM)
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009.
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Formato: | Tesis |
Lenguaje: | eng |
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Massachusetts Institute of Technology
2010
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Acceso en línea: | http://hdl.handle.net/1721.1/54567 |