Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and it is optimized to stand the 870degC ohmic contact annealing. The deposition of...

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Bibliographic Details
Main Authors: Piner, Edwin L., Chung, Jinwook, Saadat, Omair Irfan, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
self-aligned
high-electron mobility transistor (HEMT)
high-k dielectric
GaN
Online Access:http://hdl.handle.net/1721.1/55367
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/55367
https://orcid.org/0000-0002-2190-563X

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