Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and it is optimized to stand the 870degC ohmic contact annealing. The deposition of...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/55367 https://orcid.org/0000-0002-2190-563X |