Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliate...

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Bibliographic Details
Main Authors: Keast, Craig L., Wyatt, Peter W., Kong, Jing, Reina, Alfonso, Hsu, Pei-Lan, Healey, Paul D., Kedzierski, Jakub T.
Other Authors: Lincoln Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
graphene transistors
graphene
epitaxial graphene
chemical-vapor deposition (CVD)
carbon transistors
Carbon CVD
Online Access:http://hdl.handle.net/1721.1/55368
https://orcid.org/0000-0003-0551-1208

Internet

http://hdl.handle.net/1721.1/55368
https://orcid.org/0000-0003-0551-1208

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