Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliate...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/55368 https://orcid.org/0000-0003-0551-1208 |
| _version_ | 1811097326178009088 |
|---|---|
| author | Keast, Craig L. Wyatt, Peter W. Kong, Jing Reina, Alfonso Hsu, Pei-Lan Healey, Paul D. Kedzierski, Jakub T. |
| author2 | Lincoln Laboratory |
| author_facet | Lincoln Laboratory Keast, Craig L. Wyatt, Peter W. Kong, Jing Reina, Alfonso Hsu, Pei-Lan Healey, Paul D. Kedzierski, Jakub T. |
| author_sort | Keast, Craig L. |
| collection | MIT |
| description | Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes. |
| first_indexed | 2024-09-23T16:57:51Z |
| format | Article |
| id | mit-1721.1/55368 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:57:51Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/553682022-09-29T22:42:32Z Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition Keast, Craig L. Wyatt, Peter W. Kong, Jing Reina, Alfonso Hsu, Pei-Lan Healey, Paul D. Kedzierski, Jakub T. Lincoln Laboratory Kedzierski, Jakub T. Keast, Craig L. Wyatt, Peter W. Kong, Jing Reina, Alfonso Hsu, Pei-Lan Healey, Paul D. Kedzierski, Jakub T. graphene transistors graphene epitaxial graphene chemical-vapor deposition (CVD) carbon transistors Carbon CVD Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes. Defence Advanced Research Projects Agency (Air Force Contract FA8721-05-C002) 2010-06-02T18:08:31Z 2010-06-02T18:08:31Z 2009-06 2009-02 Article http://purl.org/eprint/type/JournalArticle 0741-3106 INSPEC Accession Number: 10731591 http://hdl.handle.net/1721.1/55368 Kedzierski, J. et al. “Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition.” Electron Device Letters, IEEE 30.7 (2009): 745-747. © 2009 Institute of Electrical and Electronics Engineers. https://orcid.org/0000-0003-0551-1208 en_US http://dx.doi.org/10.1109/led.2009.2020615 IEEE Electron Device Letters Article is made available in accordance with the publisher’s policy and may be subject to US copyright law. Please refer to the publisher’s site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | graphene transistors graphene epitaxial graphene chemical-vapor deposition (CVD) carbon transistors Carbon CVD Keast, Craig L. Wyatt, Peter W. Kong, Jing Reina, Alfonso Hsu, Pei-Lan Healey, Paul D. Kedzierski, Jakub T. Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition |
| title | Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition |
| title_full | Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition |
| title_fullStr | Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition |
| title_full_unstemmed | Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition |
| title_short | Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition |
| title_sort | graphene on insulator transistors made using c on ni chemical vapor deposition |
| topic | graphene transistors graphene epitaxial graphene chemical-vapor deposition (CVD) carbon transistors Carbon CVD |
| url | http://hdl.handle.net/1721.1/55368 https://orcid.org/0000-0003-0551-1208 |
| work_keys_str_mv | AT keastcraigl grapheneoninsulatortransistorsmadeusingconnichemicalvapordeposition AT wyattpeterw grapheneoninsulatortransistorsmadeusingconnichemicalvapordeposition AT kongjing grapheneoninsulatortransistorsmadeusingconnichemicalvapordeposition AT reinaalfonso grapheneoninsulatortransistorsmadeusingconnichemicalvapordeposition AT hsupeilan grapheneoninsulatortransistorsmadeusingconnichemicalvapordeposition AT healeypauld grapheneoninsulatortransistorsmadeusingconnichemicalvapordeposition AT kedzierskijakubt grapheneoninsulatortransistorsmadeusingconnichemicalvapordeposition |