Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliate...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/55368 https://orcid.org/0000-0003-0551-1208 |