Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements

Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements

We compare the observed strong saturation of the free-carrier absorption in n-type semiconductors at 300 K in the terahertz (THz) frequency range when single-cycle pulses with intensities up to 150 MW/cm[superscript 2] are used. In the case of germanium, a small increase in the absorption occurs at...

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Bibliographic Details
Main Authors: Hebling, Janos, Hoffmann, Matthias C., Hwang, Harold Young, Yeh, Ka-Lo, Nelson, Keith Adam
Other Authors: Massachusetts Institute of Technology. Department of Chemistry
Format: Article
Language:en_US
Published: American Physical Society 2010
Online Access:http://hdl.handle.net/1721.1/56300
https://orcid.org/0000-0001-7804-5418

Internet

http://hdl.handle.net/1721.1/56300
https://orcid.org/0000-0001-7804-5418

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