Kinetic Phenomena in Thin Film Electronic Materials

Kinetic Phenomena in Thin Film Electronic Materials

Show other versions (3)

Contains reports on twelve research projects.

Bibliographic Details
Main Authors:	Kim, Hyoung-June, Palmer, Joyce E., Atwater, Harry A., Garrison, Stephen M., Quek, Hui Meng, Ajuria, Sergio, Floro, Jerrold A., Thompson, Carl V., Smith, Henry I., Wong, Chee C., Im, James S., Tomita, Hisashi, Smith, David A., Jiran, Eva, Cammarata, Robert C., Clevenger, Lawrence A., Tu, King-Ning, Maiorino, Cesar D., Longworth, Hai P., Cho, Jaeshin, Kahn, H., Frost, Harold J., Dubner, Andrew D., Ro, Jaesang, Melngailis, John
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Kinetic Phenomena in Thin Film Electronic Materials Normal Grain Growth in Ultrathin (˂1000 Å) Films of Silicon Normal Grain Growth in Ultrathin (˂1000 Å) Films of Germanium Secondary Grain Growth in Ultrathin (˂1000 Å) Films of Silicon Secondary Grain Growth in Ultrathin (˂1000 Å) Films of Germanium Graphoepitaxy of Si Graphoepitaxy of Ge Graphoepitaxy of Model Materials Epitaxy via Surface-Energy-Driven Grain Growth Zone Melting Recrystallization of Silicon on Insulators Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films Metastable Phase Formation in Lithographically Defined Particles of Semiconductors Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts Grain Growth in Thin Films of Aluminum Thin Metallic Interconnects Narrow Metallic Interconnects Electromigration at Aluminum-Silicon Contacts in Integrated Circuits Computer Modeling of Microstructural Evolution in Thin Films Focussed Ion Beam Induced Deposition
Online Access:	http://hdl.handle.net/1721.1/56995

Internet

http://hdl.handle.net/1721.1/56995