High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

Contains report on one research project.

Bibliographic Details
Main Authors:	del Alamo, Jesus A., Bahl, Sandeep R., Bennett, Brian B., Greenberg, David, Azzam, Walid, Makhdumi, Shazia, Rammo, Ferase
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications
Online Access:	http://hdl.handle.net/1721.1/57056

Internet

http://hdl.handle.net/1721.1/57056