High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

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Contains report on one research project.

Bibliographic Details
Main Authors: del Alamo, Jesus A., Bahl, Sandeep R., Bennett, Brian B., Greenberg, David, Azzam, Walid, Makhdumi, Shazia, Rammo, Ferase
Format: Technical Report
Language:English
Published: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:
High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications
Online Access:http://hdl.handle.net/1721.1/57056
Description
Summary:Contains report on one research project.

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