High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications
Contains report on one research project.
| Main Authors: | , , , , , , |
|---|---|
| Format: | Technical Report |
| Language: | English |
| Published: |
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/57056 |
| _version_ | 1811089252842209280 |
|---|---|
| author | del Alamo, Jesus A. Bahl, Sandeep R. Bennett, Brian B. Greenberg, David Azzam, Walid Makhdumi, Shazia Rammo, Ferase |
| author_facet | del Alamo, Jesus A. Bahl, Sandeep R. Bennett, Brian B. Greenberg, David Azzam, Walid Makhdumi, Shazia Rammo, Ferase |
| author_sort | del Alamo, Jesus A. |
| collection | MIT |
| description | Contains report on one research project. |
| first_indexed | 2024-09-23T14:15:56Z |
| format | Technical Report |
| id | mit-1721.1/57056 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:15:56Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/570562019-04-11T04:08:15Z High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications del Alamo, Jesus A. Bahl, Sandeep R. Bennett, Brian B. Greenberg, David Azzam, Walid Makhdumi, Shazia Rammo, Ferase High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications Contains report on one research project. Joint Services Electronics Program (Contract DAAL03-86-K-0002) Joint Services Electronics Program (Contract DAALO3-89-C-0001) 2010-07-16T03:59:18Z 2010-07-16T03:59:18Z 1988-01-01 to 1988-12-31 Technical Report RLE_PR_131_01_01s_07 http://hdl.handle.net/1721.1/57056 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988 Solid State Physics, Electronics And Optics Materials and Fabrication High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications del Alamo, Jesus A. Bahl, Sandeep R. Bennett, Brian B. Greenberg, David Azzam, Walid Makhdumi, Shazia Rammo, Ferase High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications |
| title | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications |
| title_full | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications |
| title_fullStr | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications |
| title_full_unstemmed | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications |
| title_short | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications |
| title_sort | high frequency inaias ingaas metal insulator doped semiconductor field effect transistors midfet s for telecommunications |
| topic | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications |
| url | http://hdl.handle.net/1721.1/57056 |
| work_keys_str_mv | AT delalamojesusa highfrequencyinaiasingaasmetalinsulatordopedsemiconductorfieldeffecttransistorsmidfetsfortelecommunications AT bahlsandeepr highfrequencyinaiasingaasmetalinsulatordopedsemiconductorfieldeffecttransistorsmidfetsfortelecommunications AT bennettbrianb highfrequencyinaiasingaasmetalinsulatordopedsemiconductorfieldeffecttransistorsmidfetsfortelecommunications AT greenbergdavid highfrequencyinaiasingaasmetalinsulatordopedsemiconductorfieldeffecttransistorsmidfetsfortelecommunications AT azzamwalid highfrequencyinaiasingaasmetalinsulatordopedsemiconductorfieldeffecttransistorsmidfetsfortelecommunications AT makhdumishazia highfrequencyinaiasingaasmetalinsulatordopedsemiconductorfieldeffecttransistorsmidfetsfortelecommunications AT rammoferase highfrequencyinaiasingaasmetalinsulatordopedsemiconductorfieldeffecttransistorsmidfetsfortelecommunications |