Focused Ion Beam Fabrication

Focused Ion Beam Fabrication

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Contains reports on thirteen research projects and a list of publications.

Bibliographic Details
Main Authors:	Melngailis, John, Lezec, Henri J., Musil, Christian R., Mahoney, Leonard J., Chu, Alex, Chu, Larry, Shepard, Mark I., Antoniadis, Dimitri A., Turner, George W., Woodhouse, John D., Liao, Kenneth S., Kazior, Thomas E., Mozzi, Robert, Murguia, James E., Lattes, Analisa L., Munroe, Scott C., Huh, Jeung-Soo, Papadopoulos, Haralabos C., Hartney, Mark A., Shaver, David C., Tao, Tao, Wilkinson, William, Dubner, Andrew D., Wagner, Alfred, Thompson, Carl V., Ro, Jaesang
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Focused Ion Beam Fabrication Tunable Gunn Diode Light Emission From Tunable Gunn Diodes Effect of Dose Rate on Activation of Si Implanted in GaAs Focused Ion Beam Implantation of GaAs MMICs Focused Ion Beam Implantation of GaAs MESFETs Doping Gradients in GaAs MESFETs CMOS Transistors Fabricated by Focused Ion Beam Implantation CMOS Transistors Fabricated by Focused Ion Beam Lithography Charge Coupled Devices with Focused Ion Beam Implanted Doping Gradients in the Channel Focused Ion Beam Lithography Focused Ion Beam Exposure Combined With Silylation Focused Ion Beam Induced Deposition of Platinum Ion Induced Deposition of Gold, Results for the 2 to 10 keV Energy Range Ion Induced Deposition of Gold, Models for the 2 to 10 keV Energy Range Ion Induced Deposition of Gold, Results for the 50 to 100 keV Energy Range Ion Induced Deposition of Gold, Models for the 50 to 100 keV Energy Range Publications
Online Access:	http://hdl.handle.net/1721.1/57138

Internet

http://hdl.handle.net/1721.1/57138